technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj =125c t vj =25c t vj =-40c v ces 6500 6300 5800 v kollektor-dauergleichstrom t c = 80 c i c,nom. 400 a dc-collector current t c = 25 c i c 800 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 800 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 7,4 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 400 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 800 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 87 k a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 10,2 kv teilentladungs aussetzspannung partial discharge extinction voltage rms, f = 50 hz, q pd typ. 10pc (acc. to iec 1287) v isol 5,1 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 400a, v ge = 15v, t vj = 25c v ce sat - 4,3 4,9 v collector-emitter saturation voltage i c = 400a, v ge = 15v, t vj = 125c - 5,3 5,9 v gate-schwellenspannung gate threshold voltage i c = 70ma, v ce = v ge , t vj = 25c v ge(th) 6,4 7,0 8,1 v gateladung gate charge v ge = -15v ... +15v q g - 5,6 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -56-nf kollektor-emitter reststrom collector-emitter cut-off current v ce = 6300v, v ge = 0v, t vj = 25c v ce = 6500v, v ge = 0v, t vj = 125c i ces - 0,4 40 - ma ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: dr. oliver schilling date of publication: 2002-07-05 approved by: dr. schtze 2002-07-05 revision/status: series 1 1 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 400a, v ce = 3600v turn on delay time (inductive load) v ge = 15v, r gon = 6,2 ? , c ge =44nf, t vj = 25c, t d,on - 0,75 - s v ge = 15v, r gon = 6,2 ? , c ge =44nf, t vj = 125c, - 0,72 - s anstiegszeit (induktive last) i c = 400a, v ce = 3600v rise time (inductive load) v ge = 15v, r gon = 6,2 ? , c ge =44nf, t vj = 25c, t r - 0,37 - s v ge = 15v, r gon = 6,2 ? , c ge =44nf, t vj = 125c, - 0,40 - s abschaltverz?gerungszeit (ind. last) i c = 400a, v ce = 3600v turn off delay time (inductive load) v ge = 15v, r goff = 36 ? , c ge =44nf, t vj = 25c, t d,off - 5,50 - s v ge = 15v, r goff = 36 ? , c ge =44f, t vj = 125c, - 6,00 - s fallzeit (induktive last) i c = 400a, v ce = 3600v fall time (inductive load) v ge = 15v, r goff = 36 ? , c ge =44nf, t vj = 25c, t f - 0,40 - s v ge = 15v, r goff = 36 ? , c ge =44f, t vj = 125c, - 0,50 - s einschaltverlustenergie pro puls i c = 400a, v ce = 3600v, v ge = 15v turn-on energy loss per pulse r gon = 6,2 ? , c ge =44nf, t vj = 125c , l = 280nh e on - 4000 - mj abschaltverlustenergie pro puls i c = 400a, v ce = 3600v, v ge = 15v turn-off energy loss per pulse r goff = 36 ? , c ge =44nf, t vj = 125c , l = 280nh e off - 2300 - mj kurzschlu?verhalten t p 10sec, v ge 15v, acc to appl.note 2002/05 sc data t vj 125c, v cc =4400v, v cemax =v ces -l ce di/dt i sc - 2000 - a modulinduktivit?t stray inductance module l sce - 20 - nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip r cc+ee - 0,18 - m ? diode / diode min. typ. max. durchla?spannung i f = 400a, v ge = 0v, t vj = 25c v f 3,0 3,8 4,6 v forward voltage i f = 400a, v ge = 0v, t vj = 125c 3,9 4,7 v rckstromspitze i f = 400a, - di f /dt = 1400a/s peak reverse recovery current v r = 3600v, v ge = -10v, t vj = 25c i rm - 540 - a v r = 3600v, v ge = -10v, t vj = 125c - 660 - a sperrverz?gerungsladung i f = 400a, - di f /dt = 1400a/s recovered charge v r = 3600v, v ge = -10v, t vj = 25c q r - 360 - c v r = 3600v, v ge = -10v, t vj = 125c - 700 - c abschaltenergie pro puls i f = 400a, - di f /dt = 1400a/s reverse recovery energy v r = 3600v, v ge = -10v, t vj = 25c e rec - 440 - mj v r = 3600v, v ge = -10v, t vj = 125c - 1050 - mj 2 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,017 k/w thermal resistance, junction to case diode/diode, dc - - 0,032 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste 1 w/m*k / grease 1 w/m*k r thck - 0,008 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj, max - - 150 c betriebstemperatur sperrschicht junction operation temperature schaltvorg?nge igbt(rbsoa);diode(soa) switching operation igbt(rbsoa);diode(soa) t vj,op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation aln kriechstrecke creepage distance 56 mm luftstrecke clearance 26 mm cti comperative tracking index >600 anzugsdrehmoment f. mech. befestigung schraube /screw m6 m 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse anschlsse / terminals m4 2 nm terminal connection torque anschlsse / terminals m8 8 - 10 nm gewicht weight g 1000 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. m 3 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 i c [a] v ce [v] i c [a] v ce [v] 0 100 200 300 400 500 600 700 800 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 25c 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 100 200 300 400 500 600 700 800 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 20v 15v 12v 10v ausgangskennlinienfeld (typisch) i c = f (v ce ), v ge = < see inset > output characteristic (typical) t vj = 125c 4 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 i c [a] v ge [v] i f [a] v f [v] 0 100 200 300 400 500 600 700 800 56789101112131415 25c 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 10v 0 100 200 300 400 500 600 700 800 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 25c 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 e [mj] i c [a] e [mj] r g [ ? ] 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 0 100 200 300 400 500 600 700 800 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r gon =6,2 ? , r goff =36 ? , c ge = 44nf, v ge =15v, v ce = 3600v, t vj = 125c, 0 800 1600 2400 3200 4000 4800 5600 6400 7200 8000 5 1015202530354045505560 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 400a , v ce = 3600v , v ge =15v, c ge =44nf , t vj = 125c 6 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 i c [a] v ce [v] (at auxiliary terminals) i r [a] v r [v] (at auxiliary terminals) 0 100 200 300 400 500 600 700 800 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 tvj=125c tvj=25c 0,0 100,0 200,0 300,0 400,0 500,0 600,0 700,0 800,0 0 1000 2000 3000 4000 5000 6000 sicherer arbeitsbereich diode (soa) safe operation area diode (soa) p max = 1200kw ; t vj = 125c sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g,off = 36 ? , c ge =44nf, v ge =15v, t vj = , v cc <=4400v 7 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 t [s] i 1234 r i [k/kw] : igbt 7,65 4,25 1,02 4,08 i [s] : igbt 0,030 0,10 0,30 1,0 r i [k/kw] : diode 14,40 8,00 1,92 7,68 i [s] : diode 0,030 0,10 0,30 1,0 z thjc [k / w] 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 8 fz 400 r65 kf1 (final 1).xls
technische information / technical information igbt-module igbt-modules fz 400 r 65 kf1 ?u?ere abmessungen / extenal dimensions anschlsse / terminals 1 hilfsemitter / auxiliary emitter 2 gate / gate 3 hilfskollektor / auxiliary collector 4,6 emitter / emitter 5,7 kollektor / collector 9 fz 400 r65 kf1 (final 1).xls
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